Improved hydrogen ionization rate in enhanced glow discharge plasma immersion ion implantation by enlarging the interaction path using an insulating tube

Journal Article · Tue Feb 15 04:00:00 EST 2011 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3544022· OSTI ID:22062249

Zhuo, Wang ^[1]; Ying, Zhu; Liuhe, Li; Fushun, He; Dandan, Dun; Fen, Li ^[2]; Qiuyuan, Lu; Fu, Ricky K. Y.; Chu, Paul K ^[1]

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1. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)
2. Department 702, School of Mechanical and Automation Engineering, Beijing University of Aeronautics and Astronautics, Beijing (China)

A small pointed hollow anode and large tabular cathode are used in enhanced glow discharge plasma immersion ion implantation (EGD-PIII). Electrons are repelled from the substrate by the electric field formed by the negative voltage pulses and concentrate in the vicinity of the anode to enhance the self-glow discharge process. To extend the application of EGD-PIII to plasma gases with low ionization rates, an insulating tube is used to increase the interaction path for electrons and neutrals in order to enhance the discharge near the anode. Results obtained from numerical simulation based on the particle-in-cell code, finite element method, and experiments show that this configuration enhances the ionization rate and subsequent ion implant fluence. The process is especially suitable for gases that have low ionization rates such as hydrogen and helium.

• OSTI ID: 22062249
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 2 Vol. 82; ISSN 0034-6748; ISSN RSINAK
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CATHODES
COMPUTERIZED SIMULATION
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRONS
FINITE ELEMENT METHOD
GLOW DISCHARGES
HELIUM
HOLLOW ANODES
HYDROGEN
ION IMPLANTATION
IONIZATION
PLASMA
PULSES