Investigation of the thermal diffusion during the formation of a quasicrystalline phase in thin Al-Pd-Re films

Journal Article · Sun May 15 04:00:00 EDT 2011 · Crystallography Reports

DOI:https://doi.org/10.1134/S106377451103028X· OSTI ID:22054279

Makhotkin, I A ^[1]; Yakunin, S N ^[2]; Erko, A I ^[3]; Tereshchenko, E Yu ^[1]; Shaitura, D S; Chikina, E A; Tsetlin, M B; Mikheeva, M N; Ol'shanskii, E D ^[2]

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1. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
2. Russian Research Center Kurchatov Institute (Russian Federation)
3. Helmholtz-Zentrum Berlin (Germany)

The layer mixing during the formation of the Al{sub 70}Pd{sub 20}Re{sub 10} icosahedral quasicrystalline phase in thin (55 nm) Al-Pd-Re layered film systems subjected to vacuum annealing has been studied. It is shown that a combined layer of Pd and Al atoms (with the Al{sub 3}Pd{sub 2} phase dominating) is formed in the first stage (at 350 Degree-Sign C), while the rhenium layer remains invariable. In the second annealing stage (at 450 Degree-Sign C), the {beta} Prime -AlPd phase is formed and the Re layer is diffused. In the third stage (700 Degree-Sign C), Pd and Re atoms are uniformly distributed throughout the film with the formation of a quasicrystalline phase.

• OSTI ID: 22054279
• Journal Information: Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 3 Vol. 56; ISSN 1063-7745; ISSN CYSTE3
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANNEALING
FILMS
LAYERS
MIXING
PALLADIUM
RHENIUM
TEMPERATURE RANGE 0400-1000 K
THERMAL DIFFUSION