Quasicrystalline transformation in the AlCr system

Journal Article · Sat Mar 01 04:00:00 EST 1986 · J. Mat. Res.; (United States)

DOI:https://doi.org/10.1557/JMR.1986.0237· OSTI ID:5774160

Lilienfeld, D A; Nastasi, M; Johnson, H H; Ast, D G; Mayer, J W

Amorphous Al/sub 80/Cr/sub 20/ films were made by coevaporation and by room temperature ion irradiation of the coevaporated films. The amorphous phase was transformed into the quasicrystalline state through two routes: thermal and ion beam assisted anneal. The intensity of the quasicrystalline electron diffraction pattern increases continuously within the annealing temperature range from 547 to 607 /sup 0/C. The starting state of the films (as-deposited or ion-irradiated codeposited) had no effect on the thermal transformation to the quasicrystalline state. Ion irradiation of the amorphous phase at 200 /sup 0/C produces a more complete set of icosahedral diffraction lines. Icosahedral AlCr has the same reciprocal lattice spacings as icosahedral AlMn.

• Research Organization: Department of Materials Science, Cornell University, Ithaca, New York 14853
• OSTI ID: 5774160
• Journal Information: J. Mat. Res.; (United States), Journal Name: J. Mat. Res.; (United States) Vol. 1:2; ISSN JMREE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ALLOYS
ALUMINIUM ALLOYS
AMORPHOUS STATE
ANNEALING
BEAMS
CHARGED PARTICLES
CHROMIUM ALLOYS
COHERENT SCATTERING
CRYSTAL-PHASE TRANSFORMATIONS
DIFFRACTION
ELECTRON DIFFRACTION
FILMS
HEAT TREATMENTS
HIGH TEMPERATURE
ION BEAMS
IONS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SCATTERING
THIN FILMS
XENON IONS