Identification of B-K near edge x-ray absorption fine structure peaks of boron nitride thin films prepared by sputtering deposition
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigoori, Ako-gun, Hyogo 678-1205 (Japan)
Four {pi}{sup *} resonance peaks were observed in the B-K near edge x-ray absorption fine structure spectra of boron nitride thin films prepared by magnetron sputtering. In the past, these peaks have been explained as the K-absorption of boron atoms, which are present in environment containing nitrogen vacancies, the number of which is 1-3 corresponding to the three peaks at higher photon energy. However, the authors found that there was a strong correlation between the intensities of these three peaks and that of O-K absorption after wide range scanning and simultaneous measurement of nitrogen and oxygen K-absorptions of the BN films. Therefore, the authors conclude that these three peaks at the higher energy side correspond to boron atoms bound to one-to-three oxygen atoms instead of three nitrogen atoms surrounding the boron atom in the h-BN structure. The result of the first-principles calculation with a simple cluster model supported the validity of this explanation.
- OSTI ID:
- 22053992
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 5; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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