Nanohardness and chemical bonding of Boron Nitride films

Jankowski, A F

doi:10.1016/S0040-6090(98)01634-4

Title: Nanohardness and chemical bonding of Boron Nitride films

Conference · Wed Jul 08 00:00:00 EDT 1998

DOI:https://doi.org/10.1016/S0040-6090(98)01634-4· OSTI ID:14546

Jankowski, A F

Boron-nitride (BN) films are deposited by the reactive sputter deposition of fully dense, boron targets utilizing a planar magnetron source and an argon-nitrogen working gas mixture. Near-edge x-ray absorption fine structure analysis reveals distinguishing features of chemical bonding within the boron is photoabsorption cross-section. The hardness of the BN film surface is measured using nanoindentation. The sputter deposition conditions as well as the post-deposition treatments of annealing and nitrogen-ion implantation effect the chemical bonding and the film hardness. A model is proposed to quantify the film hardness using the relative peak intensities of the p*-resonances to the boron 1s spectra.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE Office of Defense Programs (DP) (US)

DOE Contract Number:: W-7405-ENG-48

OSTI ID:: 14546

Report Number(s):: UCRL-JC-131691; KC0201050; KC0201050; TRN: US0106161

Resource Relation:: Journal Volume: 343-344; Conference: 14th International Vacuum Congress, Birmingham (GB), 08/31/1998--09/04/1998; Other Information: PBD: 8 Jul 1998

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
CHEMICAL BONDS
BORON NITRIDES
FINE STRUCTURE
HARDNESS
SPUTTERING
ANNEALING
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Title: Nanohardness and chemical bonding of Boron Nitride films

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