Boron-nitride (BN) films are deposited by the reactive sputter deposition of fully dense, boron targets utilizing a planar magnetron source and an argon-nitrogen working gas mixture. Near-edge x-ray absorption fine structure analysis reveals distinguishing features of chemical bonding within the boron is photoabsorption cross-section. The hardness of the BN film surface is measured using nanoindentation. The sputter deposition conditions as well as the post-deposition treatments of annealing and nitrogen-ion implantation effect the chemical bonding and the film hardness. A model is proposed to quantify the film hardness using the relative peak intensities of the p*-resonances to the boron 1s spectra.
@conference{osti_14546,
author = {Jankowski, A F},
title = {Nanohardness and chemical bonding of Boron Nitride films},
annote = {Boron-nitride (BN) films are deposited by the reactive sputter deposition of fully dense, boron targets utilizing a planar magnetron source and an argon-nitrogen working gas mixture. Near-edge x-ray absorption fine structure analysis reveals distinguishing features of chemical bonding within the boron is photoabsorption cross-section. The hardness of the BN film surface is measured using nanoindentation. The sputter deposition conditions as well as the post-deposition treatments of annealing and nitrogen-ion implantation effect the chemical bonding and the film hardness. A model is proposed to quantify the film hardness using the relative peak intensities of the p*-resonances to the boron 1s spectra.},
doi = {10.1016/S0040-6090(98)01634-4},
url = {https://www.osti.gov/biblio/14546},
issn = {ISSN 0040-6090},
volume = {343-344},
place = {United States},
organization = {Lawrence Livermore National Lab., CA (US)},
year = {1998},
month = {07}}