Preparation of boron nitride thin films by sputtering using R.F. inductively coupled plasma
Conference
·
OSTI ID:223673
- Science Univ. of Tokyo, Noda (Japan)
Boron nitride films were deposited by sputtering of hexagonal BN (h-BN) target using R.F. inductively coupled plasma. In this new process, higher plasma density than that in usual capacitive coupled plasma sputtering can be obtained, so high rate deposition of BN films can be expected. Moreover the formation of cubic boron nitride (c-BN) film might be possible under certain circumstances. In this process, the potential of the substrate was independently controlled by an R.F. power supply, regardless of power input to the plasma, to assist the formation of c-BN phase. The authors first tried to prepare uniform BN thin films, and then intended to find the condition to prepare c-BN phase.
- Research Organization:
- International Union of Pure and Applied Chemistry; American Physical Society, New York, NY (United States)
- OSTI ID:
- 223673
- Report Number(s):
- CONF-950875--Vol.4
- Country of Publication:
- United States
- Language:
- English
Similar Records
Sputter deposition of cubic boron nitride films
Reactive sputter deposition of boron nitride
Radio-frequency sputter deposition of boron nitride based thin films
Conference
·
Sat Dec 30 23:00:00 EST 1995
·
OSTI ID:230165
Reactive sputter deposition of boron nitride
Technical Report
·
Sun Oct 01 00:00:00 EDT 1995
·
OSTI ID:212540
Radio-frequency sputter deposition of boron nitride based thin films
Journal Article
·
Sat Jul 01 00:00:00 EDT 1989
· J. Vac. Sci. Technol., A; (United States)
·
OSTI ID:6100303