X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

Journal Article · Mon Mar 15 00:00:00 EDT 2010 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3336242· OSTI ID:22053934

Miyayama, T; Sanada, N; Suzuki, M; Hammond, J S; Si, S.-Q. D.; Takahara, A ^[1]

---

1. ULVAC-PHI, Inc., 370 Enzo, Chigasaki, Kanagawa 253-8522 (Japan)

X-ray photoelectron spectroscopy depth profiling of polyimide thin films on silicon substrates using an Ar cluster ion beam results in an extremely low degradation of the polyimide chemistry. In the range from 2.5 to 20 kV, a lower cluster ion energy produces a lower sputter induced damage to the polymer and results in an improved polyimide to silicon interface width. The sputtering rates of the polyimide are found to increase exponentially with an increase in the Ar cluster ion energy.

• OSTI ID: 22053934
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 2; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARGON IONS
CLUSTER BEAMS
DAMAGE
ION BEAMS
PENETRATION DEPTH
POLYMERS
SILICON
SPUTTERING
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY