Composition depth profiles of oxidized silicon and sputtered GaAs from angle-resolved x-ray photoelectron spectroscopy

Journal Article · Thu Sep 01 00:00:00 EDT 1988 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584205· OSTI ID:7063346

Bussing, T D; Holloway, P H; Wang, Y X; Moulder, J F; Hammond, J S

An inverse Laplace transform method has been used to extract composition depth profiles from angle-resolved x-ray photoelectron spectroscopy data from oxidized Si and Ar/sup +/ bombarded GaAs. An iterative procedure determines a least-squares curve fit of the data using the Laplace transforms of step functions, which are summed to yield the composition profiles. For a sample of native oxide on a Si wafer, the composition profile defines the thickness and chemical layering of the various silicon oxide states. For GaAs sputtered with 1.5-, 3.0-, and 5.0-keV Ar/sup +/, the composition depth profiles show a surface composition near the bulk ratio, a subsurface As depletion, the extent of which increases with increasing ion energy, then a return to the bulk composition at greater depth. These As composition profiles result from preferential sputtering caused by surface segregation enhanced by sputter-assisted diffusion in the near surface region.

• Research Organization: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
• OSTI ID: 7063346
• Journal Information: J. Vac. Sci. Technol., B; (United States), Vol. 6:5
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
ATOM TRANSPORT
COLLISIONS
GALLIUM ARSENIDES
SPUTTERING
SILICA
DIFFUSION
KEV RANGE 01-10
PHOTOELECTRON SPECTROSCOPY
SEGREGATION
SURFACES
X RADIATION
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ENERGY RANGE
GALLIUM COMPOUNDS
IONIZING RADIATIONS
IONS
KEV RANGE
MINERALS
NEUTRAL-PARTICLE TRANSPORT
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RADIATION TRANSPORT
RADIATIONS
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)