Tapping mode microwave impedance microscopy

Journal Article · Wed Apr 15 04:00:00 EDT 2009 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3123406· OSTI ID:22053473

Lai, K; Kundhikanjana, W; Kelly, M A; Shen, Z X ^[1]; Peng, H; Cui, Y ^[2]

---

1. Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States)
2. Department of Material Science and Engineering, Stanford University, Stanford, California 94305 (United States)

We report tapping mode microwave impedance imaging based on atomic force microscope platforms. The shielded cantilever probe is critical to localize the tip-sample interaction near the tip apex. The modulated tip-sample impedance can be accurately simulated by the finite-element analysis and the result agrees quantitatively to the experimental data on a series of thin-film dielectric samples. The tapping mode microwave imaging is also superior to the contact mode in that the thermal drift in a long time scale is totally eliminated and an absolute measurement on the dielectric properties is possible. We demonstrated tapping images on working nanodevices, and the data are consistent with the transport results.

• OSTI ID: 22053473
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 4 Vol. 80; ISSN 0034-6748; ISSN RSINAK
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
EXPERIMENTAL DATA
FINITE ELEMENT METHOD
IMAGES
IMPEDANCE
MICROWAVE RADIATION
PROBES
SIMULATION
THIN FILMS