Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers

Journal Article · Fri May 15 04:00:00 EDT 2009 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774509030031· OSTI ID:22050841

Bushuev, V A ^[1]; Kartsev, A A ^[2]; Karavanskii, V A ^[3]; Vasil'ev, A L ^[2]

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1. Moscow State University (Russian Federation)
2. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
3. Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)

An X-ray analysis of porous silicon layers (Sb-doped n{sup +}-Si(111)) obtained by anodic oxidation for different times with a current of 50 mA/cm{sup 2} is performed by the methods of double-crystal rocking curves and total external reflection. A nondestructive method for monitoring the stationary process of the formation of micrometer-sized porous silicon layers and estimating their porosity and thickness is proposed. The parameters obtained for porous silicon layers with a thickness of {approx}6 {mu}m are confirmed by the joint processing of diffraction curves for the 111 and 333 reflections on the basis of the developed model of dynamic scattering from layers while taking into account the strain profiles {Delta}d(z)/d, the static Debye-Waller factor f(z), and the porosity P(z). The advantages and drawbacks of the proposed method are discussed.

• OSTI ID: 22050841
• Journal Information: Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 3 Vol. 54; ISSN 1063-7745; ISSN CYSTE3
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY
CRYSTALS
DEBYE-WALLER FACTOR
DOPED MATERIALS
LAYERS
OXIDATION
POROSITY
POROUS MATERIALS
REFLECTION
SILICON
STRAINS
X RADIATION
X-RAY DIFFRACTION