X-ray diffraction study of the morphology and structure of pulse-anodized porous Si multilayers

Journal Article · Mon Sep 15 04:00:00 EDT 2008 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774508050039· OSTI ID:22050941

Karavanskii, V A ^[1]; Vasil'ev, A L ^[2]; Novikov, D V ^[3]

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1. Russian Academy of Sciences, General Physics Institute (Russian Federation)
2. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
3. Deutsches Electronen Synchrotron DESY (Germany)

Porous Si layers, obtained by pulsed electrochemical etching of n-Si(001) substrates (resistivity 0.01 {Omega} cm) in a 1: 1 mixture of hydrofluoric acid and ethanol, have been investigated by high-resolution X-ray diffraction and electron microscopy. The average structural parameters of the layers grown (thickness, strain, porosity, pore size) are determined. It is found that pulsed anodic oxidation leads to a decrease in the average strain of layers. It is established that, at frequencies up to 1 Hz, anodic oxidation makes obtaining porous silicon multilayers with layer thicknesses of 20-300 nm containing Si nanocrystallites possible. It is shown that X-ray diffuse scattering from pores yields information about their ordering and can be used to monitor the processes of electrochemical etching used to form porous layers.

• OSTI ID: 22050941
• Journal Information: Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 5 Vol. 53; ISSN 1063-7745; ISSN CYSTE3
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIFFUSE SCATTERING
ELECTROCHEMISTRY
ELECTRON MICROSCOPY
ETCHING
HYDROFLUORIC ACID
LAYERS
MORPHOLOGY
OXIDATION
POROSITY
POROUS MATERIALS
PULSES
SILICON
STRAINS
THICKNESS
X-RAY DIFFRACTION