Morphology and strongly enhanced photoresponse of GaP electrodes made porous by anodic etching

Journal Article · Mon Jan 01 04:00:00 EST 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836428· OSTI ID:201411

Erne, B H; Vanmaekelbergh, D; Kelly, J J ^[1]

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1. Univ. of Utrecht (Netherlands). Debye Inst.

Single crystalline n-type GaP was made porous by anodic etching in the dark in sulfuric acid solution. The morphology and (photo)electrochemical properties of the porous layer were investigated. Submicron pits 10 to 30 {micro}m apart were formed at the surface. Below the surface, the pits acted as the nuclei of distinct porous domains. Pore widths and pore wall thicknesses were approximately 100 nm. The creation of the porous layer caused the quantum yield for light-to-current conversion to increase from extremely low values to unity for light absorbed in the indirect optical transition. The mechanism of pore formation and the striking opto-electrical properties of porous GaP are discussed.

• Sponsoring Organization: USDOE
• OSTI ID: 201411
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM PHOSPHIDES
MORPHOLOGY
N-TYPE CONDUCTORS
PHOTOCONDUCTIVITY
PHOTOCURRENTS
POROSITY
QUANTUM EFFICIENCY