Features of simultaneous ground- and excited-state lasing in quantum dot lasers

Journal Article · Wed Feb 15 04:00:00 EST 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612020285· OSTI ID:22039033

Maximov, M V; Shernyakov, Yu M ^[1]; Livshits, D A ^[2]; Savelyev, A V; Zubov, F I; Klimenko, V V ^[1]

---

1. Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)
2. Innolume GmbH (Germany)

The lasing spectra and light-current (L-I) characteristics of an InAs/InGaAs quantum dot laser emitting in the simultaneous lasing mode at the ground- and excited-state optical transitions are studied. Lasing and spontaneous emission spectra are compared. It is shown that ground-state quenching of lasing is observed even in the absence of active region self-heating or an increase in homogeneous broadening with growth in the current density. It is found that the intensities of both lasing and spontaneous emission at the ground-state transition begin to decrease at a pump intensity that significantly exceeds the two-level lasing threshold. It is also found that different groups of quantum dots are involved in ground- and excited-state lasing.

• OSTI ID: 22039033
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CURRENT DENSITY
EMISSION
EMISSION SPECTRA
EXCITED STATES
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
LASERS
QUANTUM DOTS
QUENCHING