Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

Journal Article · Tue Oct 15 04:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613100151· OSTI ID:22210485

Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V. ^[1]

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1. Saint Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

• OSTI ID: 22210485
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 47; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE CARRIERS
ELECTRONS
EXCITED STATES
GROUND STATES
LANTHANUM SELENIDES
LASERS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE