Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and {gamma}-ray detectors

Journal Article · Thu Mar 15 04:00:00 EDT 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612030153· OSTI ID:22039014

Sklyarchuk, V M; Melnychuk, S V; Maslyanchuk, O L; Grushko, E V; Sklyarchuk, O V ^[1]

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1. Chernivtsi National University (Ukraine)

Measurements of the {sup 55}Fe-isotope emission spectra and the photosensitivity of CdTe detectors with a Schottky diode, and also the temperature dependence of the resistivity of a CdTe crystal ((2-3) Multiplication-Sign 10{sup 9} {Omega}cm at 300 K) have been used to determine the concentration of uncompensated donors (1-3) Multiplication-Sign 10{sup 12} cm{sup -3}. Similar measurements performed for Cd{sub 0.9}Zn{sub 0.1}Te crystals with the resistivity (3-5) Multiplication-Sign 10{sup 10} {Omega} cm at 300 K have shown that the concentration of uncompensated donors in this case is lower by approximately four orders of magnitude. The results of calculations show that, due to such a significant decrease in the concentration of uncompensated donors, the efficiency of X- and {gamma}-ray radiation detection in the photon energy range 59 to 662 keV can decrease by one-three orders of magnitude (depending on the photon energy and the lifetime of charge carriers in the space-charge region). The results obtained account for the apparent poor detecting properties of the Cd{sub 0.9}Zn{sub 0.1}Te detectors.

• OSTI ID: 22039014
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
CDTE SEMICONDUCTOR DETECTORS
CRYSTALS
EFFICIENCY
EMISSION SPECTRA
IMPURITIES
IRON 55
PHOTONS
PHOTOSENSITIVITY
RADIATION DETECTION
SCHOTTKY BARRIER DIODES
SPACE CHARGE
TEMPERATURE DEPENDENCE