Effect of CdTe stoichiometry on the electrical properties of CdTe films

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:417702

Chung, G Y; Ahn, B T ^[1]; Song, J S ^[2]

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1. Korea Advanced Inst. of Science and Technology, Taejon (Korea, Republic of). Dept. of Materials Science and Engineering
2. Korea Inst. of Energy Research, Taejon (Korea, Republic of)

CdTe films have been prepared by a close-spaced sublimation (CSS) process with screen-printed CdTe layers as a source. The electrical resistivity of the CdTe film deposited in O{sub 2} was about one order of magnitude lower than that of the film deposited in He. The Cd content in the CdTe films deposited in O{sub 2} was smaller than that in the CdTe films deposited in He. No oxygen was detected in the CdTe films deposited in O{sub 2}. As the Cd/Te ratio decreased, the resistivity of the CdTe films decreased and reached at about 3 {times} 10{sup 4} {Omega}cm. The resistivity decrease by oxygen flow was diminished when the CdTe composition was limited by solid solubility. The above results indicated that the resistivity decrease of CdTe films deposited in O{sub 2} was not due to the oxygen doping but by the CdTe stoichiometry change.

• OSTI ID: 417702
• Report Number(s): CONF-960401--; ISBN 1-55899-329-0
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
CADMIUM TELLURIDE SOLAR CELLS
CADMIUM TELLURIDES
CHEMICAL COMPOSITION
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
GRAIN SIZE
HELIUM
MICROSTRUCTURE
OXYGEN
PHYSICAL VAPOR DEPOSITION
POWDERS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
STOICHIOMETRY
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY