Laser-induced fluorescence of fused silica irradiated by ArF excimer laser

Journal Article · Fri Jul 01 04:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3608163· OSTI ID:22038634

Haibo, Zhang ^[1]; Zhijun, Yuan; Jun, Zhou; Jingxing, Dong; Yunrong, Wei; Qihong, Lou ^[1]

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1. Shanghai Key Laboratory of All Solid-state Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, Shanghai 201800 (China)

Laser-induced fluorescence (LIF) of high-purity fused silica irradiated by ArF excimer laser is studied experimentally. LIF bands of the fused silica centered at 281 nm, 478 nm, and 650 nm are observed simultaneously. Furthermore, the angular distribution of the three fluorescence peaks is examined. Microscopic image of the laser modified fused silica indicates that scattering of the generated fluorescence by laser-induced damage sites is the main reason for the angular distribution of LIF signals. Finally, the dependence of LIF signals intensities of the fused silica on laser power densities is presented. LIF signals show a squared power density dependence, which indicates that laser-induced defects are formed mainly via two-photon absorption processes.

• OSTI ID: 22038634
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 110; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ANGULAR DISTRIBUTION
ARGON FLUORIDES
COLOR CENTERS
EMISSION SPECTRA
EXCIMER LASERS
FLUORESCENCE
IRRADIATION
LASER RADIATION
MULTI-PHOTON PROCESSES
PHYSICAL RADIATION EFFECTS
POWER DENSITY
SILICA
SILICON COMPOUNDS