OH content dependence of ArF-excimer-laser-induced absorption in type-III fused silica

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:552032

Kuzuu, Nobu ^[1]

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1. Nippon Silica Glass Co. Ltd., Tokyo (Japan)

OH content dependence of the intensity of ArF-excimer laser induced absorption in fused silica synthesized under reducing condition was investigated. The absorption spectra of each silica has a peak at 220 nm, and the intensity of which increases with decreasing OH content. Above OH content about 1150 ppm, ArF laser induced absorption was not observed. Annealing in He ambient, suppressed the creation of the 220 nm band, and no absorption was observed in the sample containing greater than 800 ppm of OH. The annealing in the H2 ambient was not so effective as in He ambient These results indicate that the fused silica synthesized under reducing conditions and containing OH more than about 1150 ppm was found to be desirable material for excimer laser optics. The fused silica containing more than 800 ppm of OH annealed in the He ambient can also be used as excimer laser optics.

• Research Organization: International Society for Optical Engineering, Washington, DC (United States)
• OSTI ID: 552032
• Report Number(s): CONF-9510106--Vol.2714
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ABSORPTION
DAMAGE
EXCIMER LASERS
HYDROXIDES
LASER RADIATION
OPTICAL SYSTEMS
PARAMETRIC ANALYSIS
SILICA