Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn{sub 1-x}Mg{sub x}O layers by molecular beam epitaxy

Journal Article · Mon Dec 26 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3673325· OSTI ID:22027858

Xia, Y; Vinter, B; Chauveau, J -M ^[1]; Brault, J; Nemoz, M; Teisseire, M; Leroux, M ^[1]

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1. CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France)

Nonpolar (1120) Al{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (1120) Zn{sub 0.74}Mg{sub 0.26}O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

• OSTI ID: 22027858
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 99; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
ANISOTROPY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
EXCITONS
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
OSCILLATOR STRENGTHS
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM WELLS
SAPPHIRE
SEMICONDUCTOR MATERIALS
STARK EFFECT
STRAINS
SUBSTRATES
VISIBLE RADIATION