Emission color-tuned light-emitting diode microarrays of nonpolar InxGa1–xN/GaN multishell nanotube heterostructures

Hong, Young Joon; Lee, Chul -Ho; Yoo, Jinkyoung; Kim, Yong -Jin; Jeong, Junseok; Kim, Miyoung; Yi, Gyu -Chul

doi:10.1038/srep18020

Emission color-tuned light-emitting diode microarrays of nonpolar In_xGa_1–xN/GaN multishell nanotube heterostructures

Journal Article · Wed Dec 09 00:00:00 EST 2015 · Scientific Reports

DOI:https://doi.org/10.1038/srep18020· OSTI ID:1259299

Hong, Young Joon ^[1]; Lee, Chul -Ho ^[2]; Yoo, Jinkyoung ^[3]; Kim, Yong -Jin ^[4]; Jeong, Junseok ^[1]; Kim, Miyoung ^[4]; Yi, Gyu -Chul ^[4]

Sejong Univ., Seoul (Korea)
Korea Univ., Seoul (Korea)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Seoul National Univ., Seoul (Korea)

Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane In_xGa_1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the In_xGa_1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via the formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000; AC52-06NA25396

OSTI ID:: 1259299

Alternate ID(s):: OSTI ID: 1352381

Report Number(s):: LA-UR--17-21824; srep18020

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Vol. 5; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (66)

The Controlled Growth of GaN Nanowires Hersee, Stephen D.; Sun, Xinyu; Wang, Xin Nano Letters, Vol. 6, Issue 8 https://doi.org/10.1021/nl060553t	journal	August 2006
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy Guo, Wei; Zhang, Meng; Banerjee, Animesh Nano Letters, Vol. 10, Issue 9 https://doi.org/10.1021/nl101027x	journal	September 2010
M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices Koester, Robert; Hwang, Jun-Seok; Salomon, Damien Nano Letters, Vol. 11, Issue 11 https://doi.org/10.1021/nl202686n	journal	November 2011
Correction to InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays Yeh, Ting-Wei; Lin, Yen-Ting; Stewart, Lawrence S. Nano Letters, Vol. 18, Issue 12 https://doi.org/10.1021/nl302264j	journal	December 2018
Metal-Lined Semiconductor Nanotubes for Surface Plasmon-Mediated Luminescence Enhancement Yoo, Jinkyoung; Ma, Xuedan; Tang, Wei Nano Letters, Vol. 13, Issue 5 https://doi.org/10.1021/nl400547z	journal	April 2013
Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array Riley, James R.; Padalkar, Sonal; Li, Qiming Nano Letters, Vol. 13, Issue 9 https://doi.org/10.1021/nl4021045	journal	August 2013
Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot Holmes, Mark J.; Choi, Kihyun; Kako, Satoshi Nano Letters, Vol. 14, Issue 2 https://doi.org/10.1021/nl404400d	journal	January 2014
Single Nanowire Light-Emitting Diodes Using Uniaxial and Coaxial InGaN/GaN Multiple Quantum Wells Synthesized by Metalorganic Chemical Vapor Deposition Ra, Yong-Ho; Navamathavan, Rangaswamy; Yoo, Hee-Il Nano Letters, Vol. 14, Issue 3 https://doi.org/10.1021/nl404794v	journal	February 2014
Coaxial silicon nanowires as solar cells and nanoelectronic power sources Tian, Bozhi; Zheng, Xiaolin; Kempa, Thomas J. Nature, Vol. 449, Issue 7164, p. 885-889 https://doi.org/10.1038/nature06181	journal	October 2007
Crystallographic alignment of high-density gallium nitride nanowire arrays Kuykendall, Tevye; Pauzauskie, Peter J.; Zhang, Yanfeng Nature Materials, Vol. 3, Issue 8, p. 524-528 https://doi.org/10.1038/nmat1177	journal	July 2004
Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk Kim, Je-Hyung; Ko, Young-Ho; Gong, Su-Hyun Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep02150	journal	July 2013
Multi-color broadband visible light source via GaN hexagonal annular structure Ko, Young-Ho; Song, Jie; Leung, Benjamin Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep05514	journal	July 2014
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures Chichibu, S.; Azuhata, T.; Sota, T. Applied Physics Letters, Vol. 69, Issue 27 https://doi.org/10.1063/1.116981	journal	December 1996
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate Sekiguchi, Hiroto; Kishino, Katsumi; Kikuchi, Akihiko Applied Physics Letters, Vol. 96, Issue 23 https://doi.org/10.1063/1.3443734	journal	June 2010
Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy Armitage, R.; Tsubaki, K. Nanotechnology, Vol. 21, Issue 19 https://doi.org/10.1088/0957-4484/21/19/195202	journal	April 2010
Submicrometre resolved optical characterization of green nanowire-based light emitting diodes Bavencove, A-L; Tourbot, G.; Garcia, J. Nanotechnology, Vol. 22, Issue 34 https://doi.org/10.1088/0957-4484/22/34/345705	journal	July 2011
Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon Nguyen, Hieu Pham Trung; Cui, Kai; Zhang, Shaofei Nanotechnology, Vol. 22, Issue 44 https://doi.org/10.1088/0957-4484/22/44/445202	journal	October 2011
Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs) Jang, Jongjin; Woo, Seohwi; Min, Daehong Journal of Nanoscience and Nanotechnology, Vol. 15, Issue 3 https://doi.org/10.1166/jnn.2015.10327	journal	March 2015
Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod Liao, Che-Hao; Chang, Wen-Ming; Chen, Horng-Shyang Optics Express, Vol. 20, Issue 14 https://doi.org/10.1364/oe.20.015859	journal	January 2012
Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition Liao, Che-Hao; Tu, Charng-Gan; Chang, Wen-Ming Optics Express, Vol. 22, Issue 14 https://doi.org/10.1364/oe.22.017303	journal	January 2014
Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array Chen, Horng-Shyang; Yao, Yu-Feng; Liao, Che-Hao Optics Letters, Vol. 38, Issue 17 https://doi.org/10.1364/ol.38.003370	journal	January 2013
Catalyst-Free GaN Nanorods Synthesized by Selective Area Growth Lin, Yen-Ting; Yeh, Ting-Wei; Nakajima, Yoshitake Advanced Functional Materials, Vol. 24, Issue 21 https://doi.org/10.1002/adfm.201303671	journal	February 2014
ZnO Nanoneedles Grown Vertically on Si Substrates by Non-Catalytic Vapor-Phase Epitaxy Park, W. I.; Yi, G. -C.; Kim, M. Advanced Materials, Vol. 14, Issue 24 https://doi.org/10.1002/adma.200290015	journal	December 2002
Quantum Confinement Observed in ZnO/ZnMgO Nanorod Heterostructures Park, W. I.; Yi, G. -C.; Kim, M. Y. Advanced Materials, Vol. 15, Issue 6 https://doi.org/10.1002/adma.200390122	journal	March 2003
Shape-Controlled Nanoarchitectures Using Nanowalls Hong, Young Joon; Jung, Hye Seong; Yoo, Jinkyoung Advanced Materials, Vol. 21, Issue 2 https://doi.org/10.1002/adma.200703168	journal	January 2009
Visible-Color-Tunable Light-Emitting Diodes Hong, Young Joon; Lee, Chul-Ho; Yoon, Aram Advanced Materials, Vol. 23, Issue 29 https://doi.org/10.1002/adma.201100806	journal	June 2011
Efficiency droop in light-emitting diodes: Challenges and countermeasures: Efficiency droop in light-emitting diodes: Challenges and countermeasures Cho, Jaehee; Schubert, E. Fred; Kim, Jong Kyu Laser & Photonics Reviews, Vol. 7, Issue 3 https://doi.org/10.1002/lpor.201200025	journal	January 2013
Bound exciton and donor–acceptor pair recombinations in ZnO Meyer, B. K.; Alves, H.; Hofmann, D. M. physica status solidi (b), Vol. 241, Issue 2 https://doi.org/10.1002/pssb.200301962	journal	February 2004
Nanowires for Integrated Multicolor Nanophotonics Huang, Yu; Duan, Xiangfeng; Lieber, Charles M. Small, Vol. 1, Issue 1, p. 142-147 https://doi.org/10.1002/smll.200400030	journal	October 2004
Growth of M-plane GaN(100) on γ-LiAlO Waltereit, P.; Brandt, O.; Ramsteiner, M. Journal of Crystal Growth, Vol. 218, Issue 2-4 https://doi.org/10.1016/S0022-0248(00)00605-9	journal	September 2000
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region Jung, Byung Oh; Bae, Si-Young; Kim, Sang Yun Nano Energy, Vol. 11 https://doi.org/10.1016/j.nanoen.2014.11.003	journal	January 2015
Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures Wang, Xue; Li, Shunfeng; Mohajerani, Matin Sadat Crystal Growth & Design, Vol. 13, Issue 8 https://doi.org/10.1021/cg4003737	journal	June 2013
Role of Surface Diffusion in Chemical Beam Epitaxy of InAs Nanowires Jensen, Linus E.; Björk, Mikael T.; Jeppesen, Sören Nano Letters, Vol. 4, Issue 10 https://doi.org/10.1021/nl048825k	journal	October 2004
High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays Kim, Hwa-Mok; Cho, Yong-Hoon; Lee, Hosang Nano Letters, Vol. 4, Issue 6 https://doi.org/10.1021/nl049615a	journal	June 2004
Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes Qian, Fang; Gradečak, Silvija; Li, Yat Nano Letters, Vol. 5, Issue 11 https://doi.org/10.1021/nl051689e	journal	November 2005
InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays Yeh, Ting-Wei; Lin, Yen-Ting; Stewart, Lawrence S. Nano Letters, Vol. 12, Issue 6 https://doi.org/10.1021/nl301307a	journal	May 2012
Coaxial In _x Ga _{1– x} N/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes Ra, Yong-Ho; Navamathavan, R.; Park, Ji-Hyeon Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl400906r	journal	May 2013
GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si Tomioka, Katsuhiro; Motohisa, Junichi; Hara, Shinjiroh Nano Letters, Vol. 10, Issue 5 https://doi.org/10.1021/nl9041774	journal	May 2010
Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures Ko, Young-Ho; Kim, Je-Hyung; Gong, Su-Hyun ACS Photonics, Vol. 2, Issue 4 https://doi.org/10.1021/ph500415c	journal	February 2015
Complete composition tunability of InGaN nanowires using a combinatorial approach Kuykendall, Tevye; Ulrich, Philipp; Aloni, Shaul Nature Materials, Vol. 6, Issue 12 https://doi.org/10.1038/nmat2037	journal	October 2007
Synergetic nanowire growth Borgström, Magnus T.; Immink, George; Ketelaars, Bas Nature Nanotechnology, Vol. 2, Issue 9 https://doi.org/10.1038/nnano.2007.263	journal	September 2007
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature Li, K. H.; Liu, X.; Wang, Q. Nature Nanotechnology, Vol. 10, Issue 2 https://doi.org/10.1038/nnano.2014.308	journal	January 2015
Nanolasers grown on silicon Chen, Roger; Tran, Thai-Truong D.; Ng, Kar Wei Nature Photonics, Vol. 5, Issue 3, p. 170-175 https://doi.org/10.1038/nphoton.2010.315	journal	February 2011
Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates Choi, Jun Hee; Zoulkarneev, Andrei; Kim, Sun Il Nature Photonics, Vol. 5, Issue 12 https://doi.org/10.1038/nphoton.2011.253	journal	October 2011
Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y. Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep07744	journal	January 2015
Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate Bavencove, A. -L.; Gilet, P.; Dussaigne, A. Electronics Letters, Vol. 47, Issue 13 https://doi.org/10.1049/el.2011.1242	journal	June 2011
Optical investigation of InGaN/GaN multiple quantum wells Wang, T.; Nakagawa, D.; Lachab, M. Applied Physics Letters, Vol. 74, Issue 21 https://doi.org/10.1063/1.124084	journal	May 1999
Indium segregation in InGaN quantum-well structures Duxbury, N.; Bangert, U.; Dawson, P. Applied Physics Letters, Vol. 76, Issue 12 https://doi.org/10.1063/1.126108	journal	March 2000
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells Lin, Yen-Sheng; Ma, Kung-Jeng; Hsu, C. Applied Physics Letters, Vol. 77, Issue 19 https://doi.org/10.1063/1.1323542	journal	November 2000
Structural characterization of nonpolar (112̄0) a -plane GaN thin films grown on (11̄02) r -plane sapphire Craven, M. D.; Lim, S. H.; Wu, F. Applied Physics Letters, Vol. 81, Issue 3 https://doi.org/10.1063/1.1493220	journal	July 2002
Quantum confinement effect in ZnO∕Mg0.2Zn0.8O multishell nanorod heterostructures Jang, Eue-Soon; Bae, Jun Young; Yoo, Jinkyoung Applied Physics Letters, Vol. 88, Issue 2 https://doi.org/10.1063/1.2162695	journal	January 2006
Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays An, Sung Jin; Chae, Jee Hae; Yi, Gyu-Chul Applied Physics Letters, Vol. 92, Issue 12 https://doi.org/10.1063/1.2903153	journal	March 2008
InGaN/GaN nanorod array white light-emitting diode Lin, Hon-Way; Lu, Yu-Jung; Chen, Hung-Ying Applied Physics Letters, Vol. 97, Issue 7 https://doi.org/10.1063/1.3478515	journal	August 2010
Magnesium acceptor levels in GaN studied by photoluminescence Viswanath, A. Kasi; Shin, Eun-joo; Lee, Joo In Journal of Applied Physics, Vol. 83, Issue 4 https://doi.org/10.1063/1.366985	journal	February 1998
GaN based nanorods for solid state lighting Li, Shunfeng; Waag, Andreas Journal of Applied Physics, Vol. 111, Issue 7 https://doi.org/10.1063/1.3694674	journal	April 2012
GaN nanowire/thin film vertical structure p–n junction light-emitting diodes Hong, Young Joon; Lee, Chul-Ho; Beom Park, Jun Applied Physics Letters, Vol. 103, Issue 26 https://doi.org/10.1063/1.4860971	journal	December 2013
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes Masui, Hisashi; Sonoda, Junichi; Pfaff, Nathan Journal of Physics D: Applied Physics, Vol. 41, Issue 16 https://doi.org/10.1088/0022-3727/41/16/165105	journal	July 2008
Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Hong, Young Joon; Jeon, Jong-Myeong; Kim, Miyoung New Journal of Physics, Vol. 11, Issue 12 https://doi.org/10.1088/1367-2630/11/12/125021	journal	December 2009
Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities Reshchikov, M. A.; Yi, G. -C.; Wessels, B. W. Physical Review B, Vol. 59, Issue 20 https://doi.org/10.1103/PhysRevB.59.13176	journal	May 1999
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges Masui, Hisashi; Nakamura, Shuji; DenBaars, Steven P. IEEE Transactions on Electron Devices, Vol. 57, Issue 1 https://doi.org/10.1109/TED.2009.2033773	journal	January 2010
Solid-State Light Sources Getting Smart Schubert, E. F. Science, Vol. 308, Issue 5726 https://doi.org/10.1126/science.1108712	journal	May 2005
InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit Wallentin, J.; Anttu, N.; Asoli, D. Science, Vol. 339, Issue 6123 https://doi.org/10.1126/science.1230969	journal	January 2013
High Power and High External Efficiency m -Plane InGaN Light Emitting Diodes Schmidt, Mathew C.; Kim, Kwang-Choong; Sato, Hitoshi Japanese Journal of Applied Physics, Vol. 46, Issue No. 7 https://doi.org/10.1143/JJAP.46.L126	journal	February 2007
Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod Liao, Che-Hao; Chang, Wen-Ming; Chen, Horng-Shyang Optics Express, Vol. 20, Issue 14 https://doi.org/10.1364/OE.20.015859	journal	January 2012
Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition Liao, Che-Hao; Tu, Charng-Gan; Chang, Wen-Ming Optics Express, Vol. 22, Issue 14 https://doi.org/10.1364/OE.22.017303	journal	January 2014
Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array Chen, Horng-Shyang; Yao, Yu-Feng; Liao, Che-Hao Optics Letters, Vol. 38, Issue 17 https://doi.org/10.1364/OL.38.003370	journal	January 2013

Cited By (4)

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes Kumar, Ashutosh; Heilmann, M.; Latzel, Michael Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep27553	journal	June 2016
Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires Lu, Weifang; Sone, Naoki; Goto, Nanami Nanoscale, Vol. 11, Issue 40 https://doi.org/10.1039/c9nr07271c	journal	January 2019
Effect of interface voids on electroluminescence colors for ZnO microdisk/ p -GaN heterojunction light-emitting diodes Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin Applied Physics Letters, Vol. 111, Issue 14 https://doi.org/10.1063/1.4997272	journal	October 2017
A review on III–V core–multishell nanowires: growth, properties, and applications Royo, Miquel; De Luca, Marta; Rurali, Riccardo Journal of Physics D: Applied Physics, Vol. 50, Issue 14 https://doi.org/10.1088/1361-6463/aa5d8e	journal	March 2017

Similar Records

Long wavelength GaN blue laser (400-490nm) development

Technical Report · Thu Oct 26 00:00:00 EDT 2000 · OSTI ID:15006164

Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn{sub 1-x}Mg{sub x}O layers by molecular beam epitaxy

Journal Article · Sun Dec 25 23:00:00 EST 2011 · Applied Physics Letters · OSTI ID:22027858

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
inorganic LEDs
nanophotonics and plasmonics