Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (1120) direction

Journal Article · Mon Apr 18 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1899258· OSTI ID:20702369

Teisseyre, H; Skierbiszewski, C; Lucznik, B; Kamler, G; Feduniewicz, A; Siekacz, M; Suski, T; Perlin, P; Grzegory, I; Porowski, S ^[1]

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1. Institute of High Pressure Physics, Polish Academy of Sciences ul. Sokolowska 29/37, 01-142 Warsaw (Poland)

Nonpolar multiple quantum wells (MQWs) have been grown by plasma assisted molecular beam epitaxy on bulk GaN crystals oriented along the (1120) direction. The photoluminescence intensity of the nonpolar MQWs was significantly higher than that found for the polar samples, both at low (10 K) and room temperature. This is a consequence of the lack of built-in electric field in samples grown along the (1120) direction. Clearly resolved spectra of the excitons have been observed in the studied MQWs. Studies of these excitonic structures, by means of polarization and temperature measurements enabled us to assign the observed lines to free and bound excitons in GaN quantum wells.

• OSTI ID: 20702369
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
BOUND STATE
CRYSTAL GROWTH
CRYSTALS
DEPOSITION
ELECTRIC FIELDS
EXCITONS
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PLASMA
POLARIZATION
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTRA
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0273-0400 K