Demonstration of forward inter-band tunneling in GaN by polarization engineering

Journal Article · Mon Dec 05 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3666862· OSTI ID:22027840

Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth ^[1]

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1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm{sup 2} at 10 mV, and 17.7 A/cm{sup 2} peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

• OSTI ID: 22027840
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 99; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CURRENT DENSITY
ELECTRIC CURRENTS
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
MOLECULAR BEAM EPITAXY
PLASMA
POLARIZATION
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SUPERCONDUCTING JUNCTIONS
TEMPERATURE RANGE 0273-0400 K
TUNNEL DIODES
TUNNEL EFFECT