Polarization-engineered GaN/InGaN/GaN tunnel diodes

Journal Article · Sun Nov 14 23:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3517481· OSTI ID:21464571

Krishnamoorthy, Sriram; Nath, Digbijoy N; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth ^[1]

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1. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

• OSTI ID: 21464571
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
APPROXIMATIONS
CALCULATION METHODS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CURRENT DENSITY
DESIGN
ELECTRIC POTENTIAL
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
MATERIALS
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
NITRIDES
NITROGEN COMPOUNDS
P-TYPE CONDUCTORS
PNICTIDES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SUPERCONDUCTING JUNCTIONS
TUNNEL DIODES
TUNNEL EFFECT
WKB APPROXIMATION