Polarization-engineered GaN/InGaN/GaN tunnel diodes

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3517481· OSTI ID:21464571

Krishnamoorthy, Sriram; Nath, Digbijoy N; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth ^[1]

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1. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

• OSTI ID: 21464571
• Journal Information: Applied Physics Letters, Vol. 97, Issue 20; Other Information: DOI: 10.1063/1.3517481; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CURRENT DENSITY
DESIGN
ELECTRIC POTENTIAL
GALLIUM NITRIDES
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
POLARIZATION
P-TYPE CONDUCTORS
SUPERCONDUCTING JUNCTIONS
TUNNEL DIODES
TUNNEL EFFECT
WKB APPROXIMATION
APPROXIMATIONS
CALCULATION METHODS
CRYSTAL GROWTH METHODS
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS