Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

Journal Article · Mon Jan 30 04:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3681172· OSTI ID:22025428

Kuang, Y J ^[1]; Sukrittanon, S ^[2]; Li, H ^[3]; Tu, C W ^[2]

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1. Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)
2. Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
3. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

• OSTI ID: 22025428
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 100; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
FABRICATION
GALLIUM NITRIDES
GALLIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K