Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

Journal Article · Mon Sep 07 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930887· OSTI ID:22482052

Kasanaboina, Pavan Kumar ^[1]; Ahmad, Estiak ^[2]; Li, Jia; Iyer, Shanthi ^[1]; Reynolds, C. Lewis; Liu, Yang ^[3]

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1. Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411 (United States)
2. Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA&T State University, Greensboro, North Carolina 27401 (United States)
3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

• OSTI ID: 22482052
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
NANOWIRES
OPTOELECTRONIC DEVICES
PHOTOLUMINESCENCE
POINT DEFECTS
RAMAN SPECTRA
STACKING FAULTS
SUBSTRATES
SYMMETRY
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
WAVELENGTHS
X-RAY DIFFRACTION