Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization

Yuan, Long; Pokharel, Rabin; Devkota, Shisir; Kuchoor, Hirandeep; Dawkins, Kendall; Lee, Min-Cheol; Huang, Yue; Yarotski, Dzmitry Anatolievitch; Iyer, Shanthi; Prasankumar, Rohit Prativadi

doi:10.1088/1361-6528/ac7d61

Title: Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization

Journal Article · Tue Jul 26 00:00:00 EDT 2022 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/ac7d61· OSTI ID:1881825

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Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
North Carolina A & T State Univ., Greensboro, NC (United States)

Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. It is established that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs can effectively red-shift their wavelength of operation and tailor their electronic properties for specific applications. Still, understanding the impact of N incorporation on non-equilibrium charge carrier dynamics and transport in semiconducting NWs is critical in achieving efficient semiconducting NW devices. In this work, ultrafast optical pump-terahertz probe spectroscopy has been used to study non-equilibrium carrier dynamics and transport in Te-doped GaAsSb and dilute nitride GaAsSbN NWs, with the goal of correlating these results with electrical characterization of their equilibrium photo-response under bias and low-frequency noise characteristics. Nitrogen incorporation in GaAsSb NWs led to a significant increase in the carrier scattering rate, resulting in a severe reduction in carrier mobility. Carrier recombination lifetimes of 33 ± 1 picoseconds (ps) and 147 ± 3 ps in GaAsSbN and GaAsSb NWs, respectively, were measured. The reduction in the carrier lifetime and photoinduced optical conductivities are due to the presence of N-induced defects, leading to deterioration in the electrical and optical characteristics of dilute nitride NWs relative to the non-nitride NWs. Finally, we observed a very fast rise time of ~2 ps for both NW materials, directly impacting their potential use as high-speed photodetectors.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; US Army Research Office (ARO); National Science Foundation (NSF)

Grant/Contract Number:: 89233218CNA000001; W911NF-19-1-0002; EECS-18322117; ECCS-1542174

OSTI ID:: 1881825

Report Number(s):: LA-UR-22-22287

Journal Information:: Nanotechnology, Vol. 33, Issue 42; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization

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