Raman spectroscopy of GaP/GaNP core/shell nanowires

Journal Article · Mon Nov 10 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901446· OSTI ID:22391966

Dobrovolsky, A.; Chen, W. M.; Sukrittanon, S. ^[1]; Kuang, Y. J. ^[2]; Tu, C. W. ^[3]

---

1. Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States)
2. Department of Physics, University of California, La Jolla, California 92093 (United States)
3. Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm{sup −1} that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

• OSTI ID: 22391966
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GALLIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
NANOWIRES
PHONONS
POLARIZATION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SCATTERING
SURFACES
ZINC SULFIDES