Epitaxial Cr on n-SrTiO{sub 3}(001) - An ideal Ohmic contact
- Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
Epitaxial Cr metallizations grown on n-SrTiO{sub 3}(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO{sub 2} layer, no reduction of the SrTiO{sub 3}, and a near-perfect Ohmic contact. Cr/n-SrTiO{sub 3}(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.
- OSTI ID:
- 22025423
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 100; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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