Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

Journal Article · Sun May 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611050162· OSTI ID:22004808

Vasil'evskii, I S ^[1]; Galiev, G B ^[2]; Klimov, E A; Ponomarev, D S; Gladkov, V P ^[1]; Kulbachinskii, V A; Klochkov, A N ^[3]; Uzeeva, N A ^[2]

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1. National Nuclear Research University (MEPhI) (Russian Federation)
2. Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)
3. Moscow State University (Russian Federation)

This study is concerned with the photoluminescence spectra and electrical parameters of AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (P-HEMT) structures with a quantum well grown at different depths L{sub b} with respect to the surface. The samples are produced so as to make the concentration of electrons in the quantum well unchanged, as the barrier layer thickness L{sub b} is reduced. It is established that the photoluminescence spectra of all of the samples exhibit peaks at the photon energies h{sub {omega}} = 1.28-1.30 and 1.35-1.38 eV. The ratio between the intensities of these peaks increases as L{sub b} is decreased. Calculations of the band structure show that variations in the spectra are due to the fact that the built-in electric field increases as the quantum well is set closer to the surface.

• OSTI ID: 22004808
• Journal Information: Semiconductors, Vol. 45, Issue 5; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
PEAKS
PHOTOLUMINESCENCE
QUANTUM WELLS
SPECTRA
SURFACES