Study of the influence of the sulfide and ultraviolet treatment of the n-i-GaAs surface on the parameters of ohmic contacts

Journal Article · Mon Aug 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611080033· OSTI ID:22004759

Avdeev, S M ^[1]; Erofeev, E V ^[2]

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1. Russian Academy of Sciences, Institute of High Current Electronics, Siberian Branch (Russian Federation)
2. Micran Research and Production Company (Russian Federation)

The possibility of improving the parameters of AuGe/Ni- and Ge/Cu-based ohmic contacts to n-i-GaAs by modifying the preliminarily oxidized GaAs surface in a sulfide-containing solution, as well as via the effect of ultraviolet radiation generated with a KrCl excimer lamp on a chalcogenated surface, is studied. It is shown that preliminary oxidation of the n-i-GaAs surface with subsequent chalcogenation makes it possible to decrease the density of the surface states, to increase the reproducibility of the passivation of the surface, and to decrease the reduced contact resistance of the AuGe/Ni ohmic contacts by a factor of 1.5. The treatment of the chalcogenated surface of n-i-GaAs with an ultraviolet radiation with wavelength {lambda} = 222 nm and emission power density W = 12 mW cm{sup -2} performed in vacuum before the deposition of metal layers of the Ge/Cu ohmic contacts makes it possible to decrease the reduced contact resistance by 25-50% andimprove the morphological characteristics of the surface of the contact area.

• OSTI ID: 22004759
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DENSITY
DEPOSITION
EMISSION
GALLIUM ARSENIDES
LAYERS
METALS
OXIDATION
PASSIVATION
POWER DENSITY
SOLUTIONS
SULFIDES
SURFACES
ULTRAVIOLET RADIATION