Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface
- Micran Research and Production Company (Russian Federation)
Comparative analysis of the influence of thermal annealing on Ge/Au/Ni-, Ge/Au/Ti/Au-, and Ge/Au/Ni/Ti/Au-based ohmic contacts and Ti/Au-based Schottky contacts deposited on an n-GaAs (100) surface treated and nontreated in (NH{sub 4}){sub 2}S aqueous solution have been performed. Annealing conditions for ohmic contacts are found that lead to a decrease in the specific contact resistance of sulfur-treated samples by a factor of 2.5-15 in comparison with the nontreated samples. Optimal annealing conditions are also determined for sulfur-treated GaAs samples with Schottky contacts, which make it possible to reduce the ideality factor and increase the barrier height and the breakdown voltage with respect to the nontreated samples.
- OSTI ID:
- 22004743
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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