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U.S. Department of Energy
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GaAs ohmic contacts for high temperature devices

Conference ·
OSTI ID:5583445
Instrumentation requirements for geothermal wells, jet engines, and nuclear reactors have exceeded the high temperature capability of silicon devices. As one part of a program to develop high temperature compound semiconductor devices, four basic ohmic contact systems for n-type GaAs have been evaluated for contact resistance as a function of temperature (24 to 350/sup 0/C) and time (at 300/sup 0/C): Ni/AuGe; Ag/Si and Ag/Ni/Si; Al/Ge and Al/AlGe; and Au/Nb/Si and Pt/Nb/Si. Optimization of processing parameters produced viable high temperature contacts with all but the Al/Ge systems. Aging at 300/sup 0/C changed the contact resistivity in only the Ag/Ni/Si contacts. Film adhesion was excellent for the Al/Ge, Ni/AuGe, and Ag/Si systems as measured with ultrasonic Al wire bond pull strengths. Lower adhesion was noticed with Nb/Si systems measured with gold wire bond pull strengths.
Research Organization:
Sandia Labs., Albuquerque, NM (USA)
DOE Contract Number:
EY-76-C-04-0789
OSTI ID:
5583445
Report Number(s):
SAND-79-2122C; CONF-800410-3
Country of Publication:
United States
Language:
English