Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Heterostructures with an active region containing a Ga{sub 0.59}In{sub 0.41}As quantum well located between GaAs{sub 1-y}P{sub y} compensating layers were studied using photoluminescence spectroscopy. It was shown that an increase in the phosphorus content in compensating layers makes it possible to obtain unrelaxed heterostructures with wider Ga{sub 0.59}In{sub 0.41}As quantum wells. On the basis of photoluminescence studies, the parameters of such a composite active region were chosen with a view to attaining the longest lasing wavelength possible. Laser heterostructures with a composite active region consisting of a highly strained Ga{sub 0.59}In{sub 0.41}As quantum well located between GaAs{sub 0.85}P{sub 0.15} compensating layers were grown on GaAs substrates by metalloorganic chemical vapor deposition. Stripe mesa-structure laser diodes of 100-{mu}m aperture emitting at 1220 nm were fabricated. The highest emission power of these laser diodes in the continuous-wave regime amounted to 2 W per output mirror.
- OSTI ID:
- 22004713
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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