Effect of substrate temperature on microstructure of epitaxial ZnO films grown on sapphire by sputtering
Journal Article
·
· AIP Conference Proceedings
- Center for Research in Nano-Technology and Science (India)
- India
The microstructure of epitaxial ZnO films on (0001) sapphire substrates deposited by reactive sputtering in substrate temperature (T{sub s}) range of 100 - 500 deg. C were investigated by High-resolution X-ray diffraction. The studies show the presence of a strained 2D layer along with 3D crystallites at low T{sub s}, whereas 3D growth is dominant at higher T{sub s}, resulting in formation of mosaic structure with lesser point and line defects.
- OSTI ID:
- 22004151
- Journal Information:
- AIP Conference Proceedings, Vol. 1447, Issue 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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