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Title: Effect of substrate temperature on microstructure of epitaxial ZnO films grown on sapphire by sputtering

Abstract

The microstructure of epitaxial ZnO films on (0001) sapphire substrates deposited by reactive sputtering in substrate temperature (T{sub s}) range of 100 - 500 deg. C were investigated by High-resolution X-ray diffraction. The studies show the presence of a strained 2D layer along with 3D crystallites at low T{sub s}, whereas 3D growth is dominant at higher T{sub s}, resulting in formation of mosaic structure with lesser point and line defects.

Authors:
; ; ; ;  [1];  [2];  [2];  [2]
  1. Center for Research in Nano-Technology and Science (India)
  2. (India)
Publication Date:
OSTI Identifier:
22004151
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; DEPOSITION; EPITAXY; FILMS; LAYERS; LINE DEFECTS; MICROSTRUCTURE; SAPPHIRE; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Singh, D., Kumar, R., Ganguli, Tapas, Srinivasa, R. S., Major, S. S., TRRCAT, Indore-452013, Department of Metallurgical Engineering and Materials, Science, and Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076. Effect of substrate temperature on microstructure of epitaxial ZnO films grown on sapphire by sputtering. United States: N. p., 2012. Web. doi:10.1063/1.4710230.
Singh, D., Kumar, R., Ganguli, Tapas, Srinivasa, R. S., Major, S. S., TRRCAT, Indore-452013, Department of Metallurgical Engineering and Materials, Science, & Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076. Effect of substrate temperature on microstructure of epitaxial ZnO films grown on sapphire by sputtering. United States. doi:10.1063/1.4710230.
Singh, D., Kumar, R., Ganguli, Tapas, Srinivasa, R. S., Major, S. S., TRRCAT, Indore-452013, Department of Metallurgical Engineering and Materials, Science, and Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076. Tue . "Effect of substrate temperature on microstructure of epitaxial ZnO films grown on sapphire by sputtering". United States. doi:10.1063/1.4710230.
@article{osti_22004151,
title = {Effect of substrate temperature on microstructure of epitaxial ZnO films grown on sapphire by sputtering},
author = {Singh, D. and Kumar, R. and Ganguli, Tapas and Srinivasa, R. S. and Major, S. S. and TRRCAT, Indore-452013 and Department of Metallurgical Engineering and Materials, Science and Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076},
abstractNote = {The microstructure of epitaxial ZnO films on (0001) sapphire substrates deposited by reactive sputtering in substrate temperature (T{sub s}) range of 100 - 500 deg. C were investigated by High-resolution X-ray diffraction. The studies show the presence of a strained 2D layer along with 3D crystallites at low T{sub s}, whereas 3D growth is dominant at higher T{sub s}, resulting in formation of mosaic structure with lesser point and line defects.},
doi = {10.1063/1.4710230},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}