Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

Journal Article · Tue Apr 15 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2905220· OSTI ID:21137157

Vennegues, P; Korytov, M; Deparis, C; Zuniga-Perez, J; Morhain, C ^[1]; Chauveau, J M ^[1]

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1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)

The interfacial relationship and the microstructure of nonpolar (11-20) ZnO films epitaxially grown on (1-102) R-plane sapphire by molecular beam epitaxy are investigated by transmission electron microscopy. The already-reported epitaxial relationships [1-100]{sub ZnO} parallel [11-20]{sub sapphire} and <0001>{sub ZnO} parallel [-1101]{sub sapphire} are confirmed, and we have determined the orientation of the Zn-O (cation-anion) bond along [0001]{sub ZnO} in the films as being uniquely defined with respect to a reference surface Al-O bond on the sapphire substrate. The microstructure of the films is dominated by the presence of I{sub 1} basal stacking faults [density=(1-2)x10{sup 5} cm{sup -1}] and related partial dislocations [density=(4-7)x10{sup 10} cm{sup -2}]. It is shown that I{sub 1} basal stacking faults correspond to dissociated perfect dislocations, either c or a+c type.

• OSTI ID: 21137157
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANIONS
CATIONS
CHEMICAL BONDS
CRYSTAL GROWTH
DENSITY
DISLOCATIONS
FILMS
INTERFACES
LAYERS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
SAPPHIRE
SEMICONDUCTOR MATERIALS
STACKING FAULTS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
ZINC OXIDES