Epitaxial growth of (001)-oriented Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on a-plane sapphire with an MgO/ZnO bridge layer

Journal Article · Mon Nov 23 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3266862· OSTI ID:21294474

Bo, Xiao; Hongrui, Liu; Avrutin, Vitaliy; Leach, Jacob H; Rowe, Emmanuel; Huiyong, Liu; Oezguer, Uemit; Morkoc, Hadis ^[1]; Chang, W; Alldredge, L M. B.; Kirchoefer, S W; Pond, J M ^[2]

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1. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
2. Naval Research Laboratory Washington, Washington, DC 20375 (United States)

High quality (001)-oriented Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown on a-plane sapphire (1120) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30 deg., which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [1120] and BST [110]/MgO [110]//ZnO [1100]. Capacitance-voltage measurements performed on BST coplanar interdigitated capacitor structures revealed a high dielectric tunability of up to 84% at 1 MHz.

• OSTI ID: 21294474
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CAPACITANCE
CAPACITORS
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRON DIFFRACTION
ELECTRONS
LAYERS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
SAPPHIRE
SPUTTERING
STRONTIUM COMPOUNDS
THIN FILMS
TITANATES
X-RAY DIFFRACTION
ZINC OXIDES