Defect formation and carrier doping in epitaxial films of the infinite layer compound
- Oak Ridge National Lab., TN (United States). Solid State Div.; and others
The correlation between defect formation and carrier doping in epitaxial films of the infinite layer compound SrCuO{sub 2} has been studied via molecular beam epitaxy controlled layer-by-layer growth experiments, chemically resolved scanning transmission electron microscopy, scanning tunneling microscopy, x-ray diffraction, electrical transport measurements, and post-growth oxidation-reduction annealing. Based on the complementary information provided by these experiments, it is concluded that the carrier doping is dominated by the formation of an electron-doped, Sr and O deficient matrix under mildly oxidizing growth conditions. Hole-doping is induced by extended defects containing excess Sr atoms and may lead to superconductivity after high-temperature oxidation.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Japan Society for the Promotion of Science, Tokyo (Japan); Yamada Science Foundation (Japan)
- OSTI ID:
- 219355
- Report Number(s):
- CONF-960163--21; ON: DE96008665
- Country of Publication:
- United States
- Language:
- English
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