Preparation and microstructure of epitaxial multilayers with infinite-layer thin films
- Matsushita Electric Industrial Co., Ltd., Kyoto (Japan). Central Research Labs.
Epitaxial multilayer thin films of SrCuO{sub 2}/(Sr,Ca)CuO{sub 2} and (Sr,Ca)CuO{sub 2}/(Sr,Ca)RuO{sub 3} have been prepared on (100) SrTiO{sub 3} single crystals by a multitarget RF magnetron sputtering. The XRD measurements revealed that the heteroepitaxial growth of c-plane of the infinite-layer SrCuO{sub 2} or a-plane of perovskite (Sr,Ca)RuO{sub 3} was confirmed with c-plane of infinite-layer (Sr,Ca)CuO{sub 2} on (100) SrTiO{sub 3} substrate surface. Both multilayer films were successfully constructed as the authors designed with a minimum layer thickness of 10{angstrom}. In the TEM images of the SrCuO{sub 2}/(Sr,Ca)CuO{sub 2} multilayer, there existed planar dislocations being parallel to the ac- and bc-planes, crossing the boundaries of SrCuO{sub 2} and (Sr,Ca)CuO{sub 2} layers. On the other hand, TEM measurements of the (Sr,Ca)CuO{sub 2}/(Sr,Ca)RuO{sub 3} multilayers indicated that there was no dislocation which exists commonly in the infinite-layer films. Resistivities of multilayer films at room temperature were ranging from 1 to 100 m{Omega}cm and showed semiconductor-like dependence against the temperature.
- OSTI ID:
- 82840
- Report Number(s):
- CONF-940142--; ISBN 0-8194-1452-2
- Country of Publication:
- United States
- Language:
- English
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