A high-current and high-temperature 6H-SiC thyristor
Journal Article
·
· IEEE Electron Device Letters
- Rutgers Univ., Piscataway, NJ (United States). Dept. of Electrical and Computer Engineering
- Army Research Lab., Fort Monmouth, NJ (United States). Physical Sciences Directorate
A 6H-SiC thyristor has been fabricated and characterized A forward breakover voltage close to 100 V and a pulse switched current density of 5,200 A/cm{sup 2} have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300 C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities.
- OSTI ID:
- 218520
- Journal Information:
- IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 3 Vol. 17; ISSN 0741-3106; ISSN EDLEDZ
- Country of Publication:
- United States
- Language:
- English
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