A high-voltage light-activated thyristor with a novel over-voltage self-protection structure

Journal Article · Mon May 01 00:00:00 EDT 1989 · IEEE (Institute of Electrical and Electronics Engineers) Transactions on Electron Devices; (USA)

DOI:https://doi.org/10.1109/16.299672· OSTI ID:5202166

Gray, J L ^[1]

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1. Purdue Univ., Lafayette, IN (USA). School of Electrical Engineering

A new type of high-voltage self-protected thyristor with a well structure formed in its p-base layer is described. The device operation uses an avalanche breakdown phenomenon. The device structure is simple and easy to fabricate compared to past avalanche-type devices. Numerical analysis and experiments demonstrate that the breakover voltage of this thyristor can be controlled by varying the well diameter and/or its depth. The breakdown voltage fluctuation of the device is 10 percent when the junction temperature is varied from 23 to 100{sup 0}C. This device is turned on safely at 7300 V.

• OSTI ID: 5202166
• Journal Information: IEEE (Institute of Electrical and Electronics Engineers) Transactions on Electron Devices; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Transactions on Electron Devices; (USA) Vol. 36:5; ISSN IETDA; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
FABRICATION
JUNCTIONS
MATERIALS
NUMERICAL SOLUTION
OPERATION
P-TYPE CONDUCTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
THYRISTORS
VOLTAGE REGULATORS