Surface photovoltage and photoreflectance study of InGaAs/AlAsSb quantum wells

Journal Article · Fri Dec 23 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666472· OSTI ID:21612411

Mozume, T; Gozu, S ^[1]

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1. National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2-1, Tsukuba 305-8568 (Japan)

Room temperature surface photovoltage (SPV), differential surface photovoltage (DSPV), and photoreflectance (PR) measurements were performed on InGaAs/AlAsSb QWs grown on InP substrates. Clear and well-resolved structures, which could be attributed to the interband optical transitions originating in the QWs, were observed in every spectrum. Transition energies measured from the SPV, DSPV, and PR spectra correspond well with those theoretically calculated from the confined energy levels in the QWs. Features those can be attributed to the transitions at the AlAsSb to InP hetero-interfaces were observed in the SPV and DSPV spectra.

• OSTI ID: 21612411
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1399; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
CURRENTS
ELECTRIC CURRENTS
ENERGY LEVELS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFACES
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCURRENTS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM WELLS
SPECTRAL REFLECTANCE
SUBSTRATES
SURFACES
TEMPERATURE MEASUREMENT