Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures

Journal Article · Mon Jan 04 04:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3295366· OSTI ID:21371393

Mozume, T; Gozu, S ^[1]

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1. National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2-1, Tsukuba 305-8568 (Japan)

Room temperature photoreflectance (PR) was performed on strained In{sub x}Ga{sub 1-x}As/AlAsSb quantum wells (QWs) grown on InP substrates. We observed clear and well-resolved structures, which could be attributed to the interband optical transitions originating in the QWs. By comparing the transition energies measured from the PR spectra with those theoretically calculated from the confined energy levels in the QWs, we confirmed that the value of the conduction band offset of In{sub 0.8}Ga{sub 0.2}As/AlAsSb was close to 1.7 eV and the nonparabolicity of the conduction band of In{sub 0.8}Ga{sub 0.2}As was between 2.25 and 2.5, which is higher than that obtained using a three-band model.

• OSTI ID: 21371393
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1199; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTRONIC STRUCTURE
ENERGY LEVELS
ENERGY RANGE
ENERGY-LEVEL TRANSITIONS
EPITAXY
EV RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM WELLS
SCATTERING
SPECTRAL REFLECTANCE
SUBSTRATES
X-RAY DIFFRACTION