Non-Ideal p-n junction Diode of Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6, 0.7) Thin Films

Journal Article · Mon Dec 12 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3653616· OSTI ID:21612364

Mustafa, Falah I ^[1]; Gupta, Shikha; Goyal, N; Tripathi, S K ^[2]

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1. Solar Energy Research Center, Renewable Energy Directorate, Ministry of Science and Technology, Baghdad (Iraq)
2. Department of Physics, Panjab University, Chandigarh -160014 (India)

We have made diodes consisting of the same alloy i.e. Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p- to n-type at x = 0.6 for Sb{sub x}Se{sub 1-x}. We have measured I-V characteristics of four p-n junction diodes i.e. p-Sb{sub 2}Se{sub 3}/n-Sb{sub 3}Se{sub 2}, p-Sb{sub 2}Se{sub 3}/n-Sb{sub 7}Se{sub 3}, p-SbSe/n-Sb{sub 3}Se{sub 2}, p-SbSe/n-Sb{sub 7}Se{sub 3}. From the I-V plots we have calculated the parameters as built-in voltage (V{sub bi}), forward resistance (R{sub f}), ideal factor (n), saturation current (I{sub o}), breakdown current (I{sub Bd}) and breakdown voltage (V{sub Bd}).

• OSTI ID: 21612364
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1393; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY COMPOUNDS
ANTIMONY SELENIDES
BREAKDOWN
CHALCOGENIDES
CHARGE CARRIERS
CONCENTRATION RATIO
CURRENTS
DIMENSIONLESS NUMBERS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
FILMS
HALL EFFECT
MAGNETIC MATERIALS
MATERIALS
N-TYPE CONDUCTORS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
THIN FILMS