High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ({lambda} {approx} 3.3 {mu}m)

Journal Article · Mon Feb 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610020235· OSTI ID:21562341

Astakhova, A P; Golovin, A S; Il'inskaya, N D; Kalinina, K V; Serebrennikova, O Yu; Stoyanov, N D ^[1]; Horvath, Zs J ^[2]; Yakovlev, Yu P ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science (Hungary)

Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p- and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength {lambda} = 3.3-3.4 {mu}m is as high as 22.3%. The optical emission power of the LEDs is 140 {mu}W at a current of 1 A in the quasi-continuous mode and reaches a value of 5.5 mW at a current of 9 A in the pulsed mode.

• OSTI ID: 21562341
• Journal Information: Semiconductors, Vol. 44, Issue 2; Other Information: DOI: 10.1134/S1063782610020235; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
INDIUM ARSENIDES
INJECTION
LAYERS
LIGHT EMITTING DIODES
METHANE
ORGANOMETALLIC COMPOUNDS
QUANTUM EFFICIENCY
RECOMBINATION
SPECTROSCOPY
SUBSTRATES
VAPOR PHASE EPITAXY
WAVELENGTHS
ALKANES
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
EFFICIENCY
EMISSION
EPITAXY
HYDROCARBONS
INDIUM COMPOUNDS
INTAKE
LUMINESCENCE
ORGANIC COMPOUNDS
PHOTON EMISSION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES