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Title: Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions

Journal Article · · Semiconductors
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Impurity {sup 119m}Sn atoms arising as a result of radioactive decay of parent {sup 119mm}Sn atoms in the structure of the glasses As{sub 2}S{sub 3}, As{sub 2}Se{sub 3}, and As{sub 2}Te{sub 3} are part of the glass composition in the form of structural units corresponding to tetravalent tin. The impurity {sup 119m}Sn atoms formed as a result of radioactive decay of {sup 119}Sb atoms in the structure of the As{sub 2}S{sub 3} and As{sub 2}Se{sub 3} glasses are localized at the arsenic sites and play the role of two-electron centers with a negative correlation energy. For the As{sub 2}Te{sub 3} glass, similarly formed {sup 119m}Sn atoms are electrically inactive. The greatest part of the daughter {sup 119m}Sn atoms arising after radioactive decay of parent {sup 119m}Te atoms are located at the chalcogen sites and are electrically inactive in the As{sub 2}S{sub 3}, As{sub 2}Se{sub 3}, and As{sub 2}Te{sub 3} glasses. A significant recoil energy of daughter atoms in the case of the {sup 119m}Te radioactive decay brings about the appearance of the {sup 119m}Sn displaced atoms.

OSTI ID:
21562250
Journal Information:
Semiconductors, Vol. 44, Issue 8; Other Information: DOI: 10.1134/S1063782610080026; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English