Impurity centers of tin in glassy arsenic chalcogenides
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
{sup 119}Sn atoms produced by radioactive decay of {sup 119}Sb impurity atoms in the structure of As{sub x}S{sub 1-x} and As{sub x}Se{sub 1-x} glasses are stabilized in the form of Sn{sup 2+} and Sn{sup 4+} ions at arsenic sites and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn{sup 2+} is an ionized acceptor, and Sn{sup 4+} is an ionized donor), whereas the neutral state of the Sn{sup 3+} center is unstable. The fraction of Sn{sup 4+} states increases with chalcogen content in glass. {sup 119}Sn atoms produced by radioactive decay of {sup 119m}Te impurity atoms in the structure of As{sub x}S{sub 1-x} and As{sub x}Se{sub 1-x} glasses are stabilized at chalcogen sites (they are electrically inactive) and arsenic sites, and the fraction of arsenic atoms decreases with the chalcogen content in glass.
- OSTI ID:
- 22004791
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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