Tin impurity centers in glassy germanium chalcogenides

Journal Article · Sat Oct 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611100058· OSTI ID:22004715

Bordovsky, G A; Gladkikh, P V; Kozhokar, M Yu; Marchenko, A V; Terukov, E I ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Tin atoms produced by radioactive decay of {sup 119mm}Sn and {sup 119}Sn impurity atoms in the structure of Ge{sub x}S{sub 1-x} and Ge{sub x}Se{sub 1-x} glasses are stabilized in the form of Sn{sup 2+} and Sn{sup 4+} ions and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn{sup 2+} is an ionized acceptor, and Sn{sup 4+} is an ionized donor), whereas the neutral state of the Sn{sup 3+} center appears to be unstable. {sup 119}Sn atoms produced by radioactive decay of {sup 119m}Te impurity atoms in the structure of Ge{sub x}S{sub 1-x} and Ge{sub x}Se{sub 1-x} glasses are stabilized at both chalcogen sites (they are electrically inactive) and germanium sites.

• OSTI ID: 22004715
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
CHALCOGENIDES
GERMANIUM
GLASS
IMPURITIES
NUCLEAR DECAY
TIN
TIN 119
TIN IONS