Epitaxial growth of Bi{sub 2}Se{sub 3} topological insulator thin films on Si (111)

Journal Article · Sun May 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3585673· OSTI ID:21560263

Liang, He; Faxian, Xiu; Guan, Huang; Xufeng, Kou; Murong, Lang; Wang, Kang L ^[1]; Yong, Wang ^[1]; Fedorov, Alexei V ^[2]; Beyermann, Ward P ^[3]; Jin, Zou ^[4]

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1. Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
2. Advanced Light Source Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States)
3. Department of Physics, University of California, Riverside, California 92521 (United States)
4. Materials Engineering and Centre for Microcopy and Microanalysis, University of Queensland, Brisbane QLD 4072 (Australia)

In this paper, we report the epitaxial growth of Bi{sub 2}Se{sub 3} thin films on Si (111) substrate, using molecular beam epitaxy (MBE). We show that the as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers. Angel-resolved photoemission experiments demonstrate single-Dirac-conelike surface states. These results combined with the temperature- and thickness-dependent magneto-transport measurements, suggest the presence of a shallow impurity band. Below a critical temperature of {approx}100K, the surface states of a 7 nm thick film contribute up to 50% of the total conduction.

• OSTI ID: 21560263
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 10; Other Information: DOI: 10.1063/1.3585673; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH SELENIDES
CRITICAL TEMPERATURE
ELECTRIC CONDUCTIVITY
IMPURITIES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
THIN FILMS
BISMUTH COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
EPITAXY
FILMS
MATERIALS
PHYSICAL PROPERTIES
SECONDARY EMISSION
SELENIDES
SELENIUM COMPOUNDS
SEMIMETALS
SPECTROSCOPY
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE