Epitaxial growth of high mobility Bi{sub 2}Se{sub 3} thin films on CdS
- Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095 (United States)
- Division of Materials and Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland 4072 (Australia)
- Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
We report the experiment of high quality epitaxial growth of Bi{sub 2}Se{sub 3} thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi{sub 2}Se{sub 3} has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 {mu}m. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of {approx}6000 cm{sup 2}/V s for the as-grown Bi{sub 2}Se{sub 3} thin films at temperatures below 30 K. These characteristics of Bi{sub 2}Se{sub 3} thin films promise a variety of potential applications in ultrafast, low-power dissipation devices.
- OSTI ID:
- 21518479
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 24; Other Information: DOI: 10.1063/1.3599540; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BISMUTH SELENIDES
CADMIUM SULFIDES
LAYERS
MOBILITY
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
SOLIDS
SUBSTRATES
SURFACES
THIN FILMS
BISMUTH COMPOUNDS
CADMIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CRYSTALS
ELECTRON SPECTROSCOPY
EMISSION
EPITAXY
FILMS
INORGANIC PHOSPHORS
PHOSPHORS
SECONDARY EMISSION
SELENIDES
SELENIUM COMPOUNDS
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS