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Strong growth orientation dependence of strain relaxation in epitaxial (Ba,Sr)TiO{sub 3} films and the resulting dielectric properties

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3581203· OSTI ID:21560220
; ;  [1];  [2];  [3]
  1. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)
  2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  3. Research Center for Hydrogen Industrial Use and Storage, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565 (Japan)
The growth orientation dependence of strain relaxation and the dielectric properties were investigated for (001)- and (111)-epitaxial (Ba,Sr)TiO{sub 3} films. The films were deposited on SrRuO{sub 3}/SrTiO{sub 3} and SrTiO{sub 3} substrates using rf magnetron sputtering. The residual strain was found to be remarkably different between the two orientations, although these lattice mismatches are identical; the strain relaxation of the (001)-epitaxial films is significantly slower than that of the (111)-epitaxial films and is promoted only when the growth rate is very low ({<=}5 nm/h). The observed orientation dependence is discussed with the surface energy for both growth orientations, which influences the growth mode of the films. Due to the large contrast of the strain in the (001)- and (111)-epitaxial films, the paraelectric to ferroelectric phase transition temperature of the (001)-epitaxial films is much higher than that of unstrained bulks, while the (111)-epitaxial films show a phase transition temperature corresponding to that of unstrained bulks regardless of the growth rates.
OSTI ID:
21560220
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English